Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-12-31
1984-01-24
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 118421, 156622, H01L 21208
Patent
active
044274645
ABSTRACT:
A method of liquid phase epitaxy is disclosed for growing a plurality of different layers on each of a plurality of semiconductor wafers during a single heating cycle. Each of a series of melts, each corresponding to a layer to be grown, is divided, in succession, into aliquant portions and a remainder portion. Each aliquant portion is contacted by one or more wafers, and epitaxial growth occurs as the temperature is lowered. Provision of a remainder portion enables a two-phase melt, and a wafer contacts only one distinct melt at a time.
After a growth step, the next successive melt likewise is separated into aliquant portions and a remainder portion, the wafers are removed from the preceding melt chambers and placed in contact with the newly formed aliquant portions, and growth of another layer ensues from another drop in temperature. The process is repeated for each melt provided.
Apparatus for carrying out the method also is described.
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Bell Telephone Laboratories Incorporated
Businger Peter A.
Lockhart H. W.
Ozaki G.
Urbano Michael J.
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