Liquid phase epitaxial process for producing three-dimensional s

Details Liquid phase epitaxial process for producing three-dimensional s Liquid phase epitaxial process for producing three-dimensional s

1991-07-15

1994-07-05

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437130, 437131, 437128, 437108, 437111, 437120, 437915, H01L 2120, H01L 21208, H01L 2182, C30B 1900

Patent

active

053267168

ABSTRACT:
The present invention relates to a new application of the liquid epitaxial method, especially the manufacturing of epitaxial monocrystalline semiconductor layers having high crystalline perfection in multi-layer arrangements on an intermediate layer of an insulating material and/or carbon and/or metal for the manufacturing of a three-dimensional semi-conductor structure, in which low mechanical stresses are present and the charge carrier capacity is available between 10.sup.14 and 10.sup.21 per cubic centimeter, wherein very low process temperatures can be used, namely between 300.degree. and 900.degree. C. The seeding for the epitaxial layer is performed in openings made in the intermediate layer, wherein the monocrystalline material is exposed. From the openings the intermediate layers become overgrown laterally and in a monocrystalline fashion. The repeated application of the liquid epitaxy in the described fashion will permit a three-dimensional integration in monocrystalline multi-layer structures which are extremely devoid of defects.

REFERENCES:
patent: 3473978 (1989-10-01), Jackson, Jr. et al.
patent: 3825449 (1974-07-01), Marinelli et al.
patent: 3890194 (1975-06-01), Ettenberg
patent: 3901744 (1975-08-01), Bolger et al.
patent: 3935040 (1976-01-01), Mason
patent: 3981764 (1976-09-01), Ito et al.
patent: 4028147 (1977-06-01), Kamath et al.
patent: 4052252 (1977-10-01), Lockwood et al.
patent: 4246050 (1981-01-01), Moon
patent: 4274890 (1981-06-01), Varon
patent: 4298410 (1981-11-01), Nakajima et al.
patent: 4319937 (1982-03-01), Holonyak et al.
patent: 4373988 (1983-02-01), Bauser et al.
patent: 4521447 (1985-06-01), Ovshinsky et al.
patent: 4522661 (1985-06-01), Morrison et al.
patent: 4529455 (1985-07-01), Bear et al.
patent: 4543267 (1985-09-01), Yamazaki
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4609411 (1986-09-01), Kohashi et al.
patent: 4711857 (1987-12-01), Cheng
patent: 4717688 (1988-01-01), Jaentsch
Grudeva et al., "Ge-Si Heterojunctions, Fabrication and Properties", Confnce: Proceedings of the International Conference on the Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures, Budapest, Hungary, (Oct. 11-17, 1970), pp. 155-164.
Cockayne et al., "Precipitate Identification in Ti-, Cr- and Ni-Doped InP Single Crystals", J. of Crystal Growth, vol. 76, 1986, pp. 251-258.
Japanese Journal of Applied Physics, Band 6, No. 7, Jul. 1967, (Tokyo, JP), T. Nakano.
Journal of the Electrochemical Society, Band 129, No. 12, Dec. 1982, (Manchester, N.H., US).
IBM Technical Disclosure Bulletin, Band 15, No. 3, Aug. 1972, (New York, US), J. M. Blum et al.
Journal of the Electrochemical Society, Band 133, No. 1, Jan. 1986, (Manchester, N.H., US), B. Jayant Baliga.
Applied Physics Letters, Band 38, No. 5, Mar. 1981, (New York, US), P. C. Chen et al.
Solid State Technology, Band 27, No. 9, Sep. 1984, (Port Washington, N.Y., US), L. Jastrzebski.

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