Liquid phase epitaxial process for growing semi-insulating GaAs

Details Liquid phase epitaxial process for growing semi-insulating GaAs Liquid phase epitaxial process for growing semi-insulating GaAs

1976-08-16

1977-06-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 33, 252 623GA, 357 18, 357 47, H01L 21208

Patent

active

040281477

ABSTRACT:
A process for forming a monolithic gallium arsenide structure having a plurality of electrically insulated gallium arsenide regions.

REFERENCES:
patent: 3344071 (1967-09-01), Cronin
patent: 3607463 (1971-09-01), Kinoshita et al.
patent: 3623905 (1971-11-01), Akai et al.
patent: 3697336 (1972-10-01), Lamorte
patent: 3846191 (1974-11-01), Blum et al.
patent: 3983510 (1976-09-01), Hayashi et al.
patent: 3994755 (1976-11-01), Kamath

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