Liquid phase epitaxial method of making a high power, vertical c

Details Liquid phase epitaxial method of making a high power, vertical c Liquid phase epitaxial method of making a high power, vertical c

1978-04-24

1980-03-04

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29590, 29578, 148172, 148175, 148187, 357 20, 357 22, 357 38, 357 58, H01L 21208, H01L 2174, H01L 2980

Patent

active

041916026

ABSTRACT:
A high power field effect transistor having a buried grid is fabricated by epitaxially growing from the liquid phase, on a lightly doped silicon substrate, a silicon layer heavily doped with the same conductivity type determining impurities. The substrate is thinned, and a grid region heavily doped with opposite conductivity type determining impurities is diffused into the substrate. An upper layer lightly doped with the same conductivity type determining impurities as those in the substrate is then grown epitaxially from the liquid phase atop the grid region, followed by diffusion of the same conductivity type determining impurities into the upper layer. The resulting structure exhibits relatively large source-to-drain conduction area in the grid region.

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Farzan et al., "Depletion V-Groove MOS(VMOS) Power Transistor" Solid State Electronics, vol. 19, pp. 297-306 (1976).
Yoshida et al., "High Power MOSFET . . . Meshed Gate Structure" _IEEE J. of Solid-State Circuits, vol. SC-11, 1976, pp. 472-477.

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