Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-04-24
1978-12-05
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, H01L 21208
Patent
active
041284402
ABSTRACT:
Buried regions of predetermined conductivity in silicon semiconductor devices are formed with substantially no out diffusion from the substrate and buried region, and with substantially no lateral autodoping, by diffusing the region into a monocrystalline silicon wafer doped to one conductivity type, and depositing silicon from a melt supersaturated with silicon and containing conductivity type determining impurities, epitaxially atop the wafer. The device is completed by performing conventional diffusion of conductivity type determining impurities into the epitaxially deposited layer.
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patent: 3984262 (1976-10-01), Burnham et al.
patent: 3994755 (1976-11-01), Kamath et al.
patent: 4053334 (1977-10-01), Ehle et al.
Batiga, J. of the Electrochemical Society, vol. 124, Oct. 1977, pp. 1627-1631.
Baliga, J. of the Electrochemical Society, vol. 125, Apr. 1978, pp. 598-600.
D'Asaro et al., Semiconductor Silicon, 1969, pp. 233-242.
Kim, J. of the Electrochemical Society, vol. 119, Oct. 1972, pp. 1394-1398.
Cohen Joseph T.
General Electric Company
Ozaki G.
Snyder Marvin
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