Liquid phase epitaxial method for forming single crystal films o

Details Liquid phase epitaxial method for forming single crystal films o Liquid phase epitaxial method for forming single crystal films o

1988-12-02

1991-12-31

Roy, Upendra

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

156621, 156624, 423593, 505729, C30B 1530, B05D 512

Patent

active

050772716

ABSTRACT:
A method is disclosed for forming a thin film of an oxide based superconductor on a substrate, which is preferably a substrate comprising superconducting material, which comprises forming an oxide based solvent, dissolving in the solvent a stoichiometric amount of compounds capable of forming a superconducting material to form a molten solution, maintaining the molten solution at a temperature of from about 400.degree. to about 1000.degree. C., immersing a substrate into the resulting molten solution, epitaxially growing a thin film of a superconductor crystal on the substrate, and bubbling a source of oxygen through the molten solution during the epitaxial growth of the thin film superconductor crystal.

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