Liquid phase epitaxial growth technique

Details Liquid phase epitaxial growth technique Liquid phase epitaxial growth technique

1983-09-20

1985-03-12

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, H01L 21208

Patent

active

045043280

ABSTRACT:
A first growth melting solution which has been used for the growth of a first layer is first replaced with a third melting solution and then with a second growth melting solution for the growth of a second layer. Using the third melting solution of a composition intermediate the first and second melting solutions effectively suppresses supersaturate or unsaturation of the solute during replacement of the melting solutions.

REFERENCES:
patent: 3909317 (1975-09-01), Itoh et al.
patent: 3950195 (1976-04-01), Rode et al.
patent: 3960618 (1976-06-01), Kawamura et al.
patent: 4028148 (1977-06-01), Horikoshi
patent: 4338877 (1982-07-01), Yamanaka et al.
Yoshiji Horikoshi, "A New Liquid Phase Epitaxial Growth", Japanese J. Appl. Phys., vol. 15, No. 5, May 1976, pp. 887 and 888.

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