Liquid phase epitaxial growth process

Details Liquid phase epitaxial growth process Liquid phase epitaxial growth process

1983-06-22

1986-03-25

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29569L, 148172, 156624, H01C 21208

Patent

active

045781265

ABSTRACT:
A liquid phase epitaxial growth process for particular use in growing semi-insulating epitaxial layers of III-V semiconductor compounds such as indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide. The high resistivity of the layer is achieved by doping it with a deep level dopant such as cobalt, in a concentration in the range of 0.6 to 1.0 atomic percent, and by purifying the growth solution to an impurity concentration of at most 1.times.10.sup.16 atoms per cubic centimeter.

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