Liquid phase epitaxial growth of high temperature superconductin

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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156610, 156621, 156623R, 505729, C01F 1700, C30B 900

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active

051622971

ABSTRACT:
This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.

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