Liquid-phase epitaxial growth of cdTe on HgCdTe

Details Liquid-phase epitaxial growth of cdTe on HgCdTe Liquid-phase epitaxial growth of cdTe on HgCdTe

1980-11-18

1982-11-02

Edlow, Martin H.

357 30, 357 61, H01L 29161, H01L 2714

Patent

active

043576206

ABSTRACT:
Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase pitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520.degree. C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg.sub.1-x Cd.sub.x Te interface has been as small as 0.3 .mu.m for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to .about.2.8 .mu.m at 77.degree. K. has been demonstrated.

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patent: 3809584 (1974-05-01), Akai
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patent: 3884788 (1975-05-01), Maciolek
patent: 3902924 (1975-09-01), Maciolek
patent: 3988774 (1976-10-01), Cohen-Solal
patent: 4228365 (1980-10-01), Gutierrez
Lanir et al., Appl. Phys. Lett., Jan. 1, 1979, p. 50 et seq.

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