Liquid-phase epitaxial growth method of a IIIb-Vb group compound

Details Liquid-phase epitaxial growth method of a IIIb-Vb group compound Liquid-phase epitaxial growth method of a IIIb-Vb group compound

1985-01-25

1986-09-02

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29569L, 29576E, H01L 21208

Patent

active

046094113

ABSTRACT:
The reproducibility of Te doping in III-V group compounds is improved by using as the dopant a III-V group compound containing Te at a concentration of at least 1.times.10.sup.17 cm.sup.-3.

REFERENCES:
patent: 3897281 (1975-07-01), Gilbert et al.
patent: 4088514 (1978-05-01), Hara et al.
patent: 4342148 (1982-08-01), Springthorpe et al.
patent: 4507157 (1985-03-01), Oliver
patent: 4540450 (1985-09-01), Hawrylo

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