Liquid phase epitaxial growth method for producing a III-V group

Details Liquid phase epitaxial growth method for producing a III-V group Liquid phase epitaxial growth method for producing a III-V group

1983-11-21

1986-06-03

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 29569L, H01L 21208

Patent

active

045927910

ABSTRACT:
A liquid phase epitaxial growth method is disclosed wherein (111)A InP substrate is used for growing an epitaxial layer of Al.sub.x In.sub.1-x As or Al.sub.x Ga.sub.y In.sub.1-x-y As compound semiconductor by liquid phase epitaxy.

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Japanese Journal of Applied Physics, vol. 21, No. 4, Part 2, Apr. 1982, pp. L237-L239, Tokyo, JP, K. Nakajima et al.: "Direct LPE Growth of InP on (111)A Oriented In.sub.0.53 Ga.sub.0.47 as Without Dissolution".
Journal of Crystal Growth, vol. 27, 1974, pp. 142-147, North-Holland Publishing Co. M. G. Astles et al.: "Nucleation and Growth of Ga.sub.1-x Al.sub.x As On (111) GaP".
Applied Physics Letters, vol. 41, No. 2, Jul. 1982, pp. 194-196, American Institute of Physics, New York, US, K. Nakajima, et al.: "Liquid Phase Epitaxial Growth of Lattice-Matched Al.sub.0.48 In.sub.0.5 As on InP".

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