Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1995-08-03
1997-02-18
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
117 56, 117 57, 117 59, 117 61, 117260, 118719, C30B 1906
Patent
active
056037619
ABSTRACT:
In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment. With this heat-treatment, surface oxide films on the substrates and the solution are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.
REFERENCES:
patent: 3996891 (1976-12-01), Isawa et al.
patent: 4681773 (1987-07-01), Bean
Japanese Journal of Applied Physics, vol. 15, No. 7, Jul. 1976 pp. 1219-1227, Takao Yamaguchi et al. `Rotating boat system for liquid phase epitaxial growth of GaP green light-emitting diodes` pp. 1219-1222.
Higuchi Susumu
Saito Masahiko
Yanagisawa Munehisa
Yoshida Yuji
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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