Liquid phase epitaxial growth method

Details Liquid phase epitaxial growth method Liquid phase epitaxial growth method

1983-04-28

1985-02-12

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, H01L 21208

Patent

active

044989377

ABSTRACT:
During liquid phase epitaxial growth of a compound semiconductor layer on a substrate, an unsaturated solution is brought into contact with a solute source crystalline plate. The plate dissolves into the solution, which creates a supercooling condition in the solution without a decrease in the temperature of the solution. The crystalline plate has a denser crystal face than that of the substrate, and/or the lattice constant of the crystalline plate is considerably different from that of the substrate.

REFERENCES:
patent: 3631836 (1972-01-01), Jarvela et al.
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3793093 (1974-02-01), Nishizawa et al.
patent: 4088514 (1978-05-01), Hara et al.
patent: 4110133 (1978-08-01), Garrett et al.
patent: 4179317 (1979-12-01), Sakai et al.
patent: 4246050 (1981-01-01), Moon
patent: 4287485 (1981-09-01), Hsieh
patent: 4373989 (1983-02-01), Beggs et al.
"Composition Profiles and Growth Kinetics of Ga.sub.x In.sub.1-x P LPE Layers: Experiments and Theoretical Approach", Etcheberry et al., Journal of Crystal Growth, vol. 53, 1981, May, No. 2, pp. 413-417, Amsterdam, Netherlands.

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