Liquid phase epitaxial growth method

Details Liquid phase epitaxial growth method Liquid phase epitaxial growth method

1985-10-15

1987-10-27

Ozaki, George T.

Fishing, trapping, and vermin destroying

437121, H01L 21208

Patent

active

047027819

ABSTRACT:
Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of solutions for use in epitaxial growth, in which method, epitaxial growth of a layer having thickness of less than 500 .ANG. is carried out under the condition that the slider is sliding in one direction, i.e., without stopping the sliding movement of the slider. Thereby, the thickness of the growth layer is controlled by controlling the time when the substrate contacts the solution, or by the sliding speed of the slider.

REFERENCES:
patent: 3664294 (1972-05-01), Solomon
patent: 4052252 (1977-10-01), Lockwood et al.
patent: 4063972 (1977-12-01), Akai et al.
patent: 4426702 (1984-01-01), Yamashita et al.
patent: 4566171 (1986-01-01), Nelson et al.
patent: 4578127 (1986-03-01), Gossard et al.
E. A. Rezek et al., "Quantum- Well InP-In.sub.1-x Ga.sub.x P.sub.1-z As.sub.z heterostructure Lasers Grown by Liquid Phase Epitacy (LPE)", Journal of Electronic Materials, vol. 9, No. 1, 1980, pp. 1-24.

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