Liquid metal inclusion migration by means of an electrical poten

Details Liquid metal inclusion migration by means of an electrical poten Liquid metal inclusion migration by means of an electrical poten

1982-04-28

1983-03-22

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 148183, 75 65ZM, 156602, 156616R, 29584, 29585, 29590, 204130, 204140, H01L 21326, H01L 21225

Patent

active

043774237

ABSTRACT:
Liquid metal inclusions are migrated in a host body of semiconductor material by means of an electrical potential gradient to produce regions of recrystallized single crystal semiconductor material in the host body. The resistivities of the regions and the semiconductor material of the host body will be different and if the conductivity types of the regions and the semiconductor material of the host body are also different, P-N junctions will be formed between the regions and the host body.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3188244 (1965-06-01), Hutchins et al.
patent: 3378409 (1968-04-01), Hurle et al.
patent: 4012242 (1977-03-01), Matare
patent: 4049505 (1977-09-01), Chatterji

Affiliated with

Also associated with

Rating

Liquid metal inclusion migration by means of an electrical poten does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid metal inclusion migration by means of an electrical poten, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid metal inclusion migration by means of an electrical poten will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1868197