Liquid junction photoelectrodes using amorphous silicon-based th

Chemistry: electrical current producing apparatus – product – and – Deferred action type – Responsive to light

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204266, 204290R, 204DIG3, 204129, H01M 636, C25B 102

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active

046561030

ABSTRACT:
An amorphous silicon semiconductor alloy having multiple layers is used to form a photoelectrode (either a photoanode or a photocathode) for use in a photoelectrochemical cell for the photoelectrolysis of water to produce hydrogen or the conversion of solar energy into electrical energy. Each layer of the semiconductor alloy has a different dopant concentration ranging from no dopant to a heavy dopant concentration. The photoelectrochemical cell can utilize a photocathode and a conventional metal anode, a photoanode or both a photocathode and a photoanode according to the present invention. The semiconductor alloy of the photoelectrode is a-Si:F:H or a-Si:H.sub.x deposited on a reflective layer of aluminum or molybdenum which is deposited on a substrate of glass or stainless steel. A tunnelable oxide layer can be deposited or intrinsically formed to cover and protect the top surface of the semiconductor alloy body. The photoanode is of an n-type configuration while the photocathodes can be either a p-type or a P-I-N type configuration.

REFERENCES:
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W. M. Ayers, J. Appl. Phys., vol. 53, pp. 6911-6918 (Oct. 1982).
W. M. Ayers, J. Electrochem. Soc., vol. 129, pp. 1644-1646 (1982).
R. Williams, J. Appl. Phys., vol. 50, pp. 2848-2851 (1979).
T. Skotheim et al., Appl. Phys. Lett., vol. 40, pp. 281-283 (1982).

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