Liquid epitaxial process for producing three-dimensional semicon

Details Liquid epitaxial process for producing three-dimensional semicon Liquid epitaxial process for producing three-dimensional semicon

1994-06-20

1995-03-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437130, 437131, 437128, 437108, 437111, 437120, 437915, H01L 2120, H01L 21208, H01L 2182, C30B 1900

Patent

active

053977360

ABSTRACT:
By a liquid epitaxial process monocrystalline semiconductor layers are produced having a high degree of crystal perfection in a multi-layer arrangement on intermediate layers of an insulating material and/or carbone and/or metal, in order to produce three-dimensional semiconductor structures which offer low mechanical stresses and load-bearing densities of between 10.sup.14 and 10.sup.21 per cm.sup.3. Very low manufacturing temperatures can be used, for example between 300.degree. and 900.degree. C. The seeding for each epitaxial layer is performed in the openings of the intermediate layer where a monocrystalline material is located in a free state. From these openings, the lateral and monocrystalline growth of the intermediate layers takes place. The repeated application of the liquid epitaxial process described allows three-dimensional integration in monocrystalline multilayer structures which are extremely devoid of defects.

REFERENCES:
patent: 3473978 (1969-10-01), Jackson, Jr. et al.
patent: 3825449 (1974-07-01), Marinelli et al.
patent: 3890194 (1975-06-01), Ettenberg
patent: 3901744 (1975-08-01), Bolger et al.
patent: 3935040 (1976-01-01), Mason
patent: 3981764 (1976-09-01), Ito et al.
patent: 4028147 (1977-06-01), Kamath et al.
patent: 4052252 (1977-10-01), Lockwood et al.
patent: 4246050 (1981-01-01), Moon
patent: 4258647 (1981-03-01), Pohl et al.
patent: 4274890 (1981-06-01), Varon
patent: 4298410 (1981-11-01), Nakajima et al.
patent: 4319937 (1982-03-01), Holonyak et al.
patent: 4373988 (1983-02-01), Bauser et al.
patent: 4521447 (1985-06-01), Ovshinsky et al.
patent: 4522661 (1985-06-01), Morrison et al.
patent: 4529455 (1985-07-01), Bear et al.
patent: 4543267 (1985-09-01), Yamazaki
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4609411 (1986-09-01), Kohashi et al.
patent: 4711857 (1987-12-01), Cheng
patent: 4717688 (1988-01-01), Jaentsch
patent: 5326716 (1994-07-01), Bauser et al.
Grudeva et al., "Ge-Si Heterojunctions, Fabrication and Properties", Conference: Proceedings of the International Conference on the Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures, Budapest, Hungary (Oct. 11-17, 1970), pp. 155-164.
Cockayne et al., "Precipitate Identification in Ti-, Cr-, and Ni-Doped InP Single Crystals", J. of Crystal Growth, vol. 76, 1986, pp. 251-258.

Affiliated with

Also associated with

Rating

Liquid epitaxial process for producing three-dimensional semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid epitaxial process for producing three-dimensional semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid epitaxial process for producing three-dimensional semicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-713557