Etching a substrate: processes – Forming or treating thermal ink jet article
Reexamination Certificate
2005-06-21
2005-06-21
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Forming or treating thermal ink jet article
C216S017000, C438S021000, C427S585000, C347S065000
Reexamination Certificate
active
06908564
ABSTRACT:
Patterning is performed to thermal oxide films12aand12bformed on both surface sides of a silicon substrate in which crystal orientation of a surface is (100) or (110), a liquid chamber pattern and a liquid supplying port pattern are formed, and a liquid chamber and a liquid supplying port are formed separately by anisotropically etching the silicon substrate from both surface sides at the same time. Then, a silicon nitride film is deposited with a low pressure chemical vapor deposition to both surface sides of the silicon substrate and all faces of the liquid chamber and the liquid supplying port which are formed by etching. As a result, when the silicon substrate is used for a top plate, stiffness of the top plate is improved, design freedom of the liquid chamber and the liquid supplying port is increased, misalignment is prevented in bonding to the substrate, degradation of ejecting performance is prevented, and a liquid discharge head having high preciseness and high reliability can be provided.
REFERENCES:
patent: 4343013 (1982-08-01), Bader et al.
patent: 4961821 (1990-10-01), Drake et al.
patent: 6196667 (2001-03-01), Hiroki et al.
patent: 6199972 (2001-03-01), Ishinaga et al.
patent: 6206505 (2001-03-01), Yoshihira et al.
patent: 6206508 (2001-03-01), Asakawa et al.
patent: 6254215 (2001-07-01), Hiroki et al.
patent: 6312111 (2001-11-01), Kimura et al.
patent: 6334669 (2002-01-01), Kudo et al.
patent: 6378993 (2002-04-01), Ozaki et al.
patent: 6464342 (2002-10-01), Kubota et al.
patent: 6491380 (2002-12-01), Taneya et al.
patent: 6569343 (2003-05-01), Suzuki et al.
patent: 2003/0030701 (2003-02-01), Sugiyama et al.
patent: 2003/0038108 (2003-02-01), Koyama et al.
Kashino Toshio
Koyama Shuji
Mihara Hiroaki
LandOfFree
Liquid discharge head and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Liquid discharge head and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid discharge head and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3504831