Liquid crystal panel using thin film transistor and...

Details Liquid crystal panel using thin film transistor and... Liquid crystal panel using thin film transistor and...

2005-04-22

2009-02-03

Connelly Cushwa, Michelle R (Department: 2874)

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

C349S038000

Reexamination Certificate

active

07486357

ABSTRACT:
The present invention generally relates to a liquid crystal panel using a thin film transistor and a manufacturing method thereof, and more specifically to a liquid crystal panel using a thin film transistor and a manufacturing method thereof for improving an opening ratio by forming a storage capacitor under a channel. The present invention has suggested a method for effectively contacting an upper electrode for forming a capacitor with a lower electrode since the storage capacitor is located under the channel. Compared to a prior art in which one of storage capacitor electrodes is formed side by side with a channel of a thin film transistor, capacitor electrodes formed according to the present invention are located near to a substrate, thereby forming contact electrodes in many times without forming them one time.

REFERENCES:
patent: 5966193 (1999-10-01), Zhang et al.
patent: 6556265 (2003-04-01), Murade
patent: 6661476 (2003-12-01), Abe et al.
patent: 6714266 (2004-03-01), Ueda et al.
patent: 7199853 (2007-04-01), Koide
patent: WO/03/058334 (2003-07-01), None

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