Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-09-18
1998-11-03
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 71, 257296, 257301, 257311, H01L 27108, H01L 2904, H01L 2976, H01L 31036
Patent
active
058312846
ABSTRACT:
A storage capacitor for use in a liquid crystal display and a method of manufacturing the capacitor are disclosed. The storage capacitor includes a first electrode on a substrate. Then, a first insulating layer is formed over the first electrode. The capacitor also includes a second insulating layer immediately over the first insulating layer. The second insulating layer is formed to have a recess above the first electrode. This recess may extend through the second insulating layer as to expose the first insulating layer. The capacitor further includes a second electrode over the second insulating layer including the recess.
REFERENCES:
patent: 3862360 (1975-01-01), Doll et al.
patent: 5648663 (1997-07-01), Kitahara et al.
Kim In-Woo
Park Jae-Yong
LG Electronics Inc.
Ngo Ngan V.
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