Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-05-31
1992-11-24
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
359 54, 257 72, 257632, G02F 113, H01L 2712
Patent
active
051668165
ABSTRACT:
The liquid crystal display panel has a glass substrate, a plurality of rows of gate electrode provided on the glass substrate, a plurality of columns of drain electrode provided on the glass substrate, a plurality of pixel electrodes provided corresponding to each of the intersections of a matrix formed by the gate electrodes and the drain electrodes, a first and second insulating films that are provided between the gate electrodes, the drain electrodes, and the pixel electrodes in order to isolate them with each other, and a plurality of thin film transistors in which drains are connected to the drain electrodes and sources are connected to each of the plurality of pixel electrodes.
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patent: 4705358 (1987-11-01), Yamazaki et al.
patent: 4778258 (1988-10-01), Parks et al.
patent: 4821092 (1989-04-01), Noguchi
patent: 4855806 (1989-08-01), Parks et al.
patent: 5003356 (1991-03-01), Wakai et al.
Applied Physics, vol. 24, pp. 357-362, 1981.
SID 88 Digest pp. 310-313, 1981.
H. Moriyama, H. Uchida, S. Nichida, H. Nakano, Y. Hirai, S. Kaneko, C. Tani "12-in. Full-Color a Si:H TFT-LCD with Pixel Electrode Buried in Gate Insulator," SID 89 Digest, pp. 145-147.
Kaneko Setsuo
Sukegawa Osamu
Hille Rolf
Ho Tan
NEC Corporation
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