Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-11-07
1999-01-19
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257350, 257390, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
058616357
ABSTRACT:
A liquid crystal display device includes a substrate, a plurality of gate lines and source lines on the substrate and in a same layer, and a plurality of trench portions on sides of the gate lines. The trench portions electrically separate the source lines from the gate lines and each separated source line has a contact area placed at a distance from the trench portions. A first insulating layer is formed on the source and gate lines and a second insulating layer is formed on the first insulating film and in the trench portions. A conductive layer is formed on the second insulating layer and electrically connects the source lines to each other through the contact areas. The conductive layer includes source, drain electrode, and pixel electrodes.
REFERENCES:
patent: 5604358 (1997-02-01), Kim
patent: 5684365 (1997-11-01), Tang et al.
patent: 5757453 (1998-05-01), Shin et al.
LG Electronics Inc.
Ngo Ngan V.
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