Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-12-02
2000-02-01
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 257349, 257352, 349 41, 349 42, 349 43, 349 46, 349 47, H01L 2904
Patent
active
060205997
ABSTRACT:
A thin film transistor array substrate of a liquid crystal display is provided which includes a substrate, a shorting bar on the substrate, and a plurality of gate lines connected to the shorting bar, each gate line having an electrically non-connection region and a connection region connecting the non-connection region to the shorting bar, wherein said connection region has a thickness such that the gate lines and the shorting bar are electrically separated from each other when the connection regions are anodized.
REFERENCES:
patent: 5684547 (1997-11-01), Park et al.
patent: 5767530 (1998-06-01), Ha
Abraham Fetsum
LG Electronics Inc
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