Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-07-05
1993-01-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
252 72, 252761, H01L 2701, H01L 2978, H01L 2712
Patent
active
051775778
ABSTRACT:
An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film of the aluminum film.
REFERENCES:
patent: 4469568 (1984-09-01), Kato etal.
patent: 5032536 (1991-07-01), Oritsuki et al.
patent: 5036370 (1991-07-01), Miyago et al.
Matsukawa Yuka
Matsumaru Haruo
Sasano Akira
Shirahashi Kazuo
Taniguchi Hideaki
Fahmy Wael
Hille Rolf
Hitachi , Ltd.
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