Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-12-22
2000-09-26
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257 59, 257763, 257758, H01L 29786, H01L 23485
Patent
active
061246042
ABSTRACT:
A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively and waveform rounding of an applied high-frequency signal can be reduced without increasing the number of manufacturing steps.
REFERENCES:
patent: 4914503 (1990-04-01), Shirato et al.
patent: 5491352 (1996-02-01), Tsuji
patent: 5780872 (1998-07-01), Misawa et al.
patent: 5804501 (1998-09-01), Kim
Koyama Jun
Ogata Yasushi
Ohtani Hisashi
Yamazaki Shunpei
Duong Hung Van
Picard Leo P.
Semiconductor Energy Laboratory, Inc.
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