Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-01-30
2009-02-10
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE51005, C257SE29151, C438S149000, C438S508000
Reexamination Certificate
active
07488979
ABSTRACT:
A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion; forming a first gate electrode in the display area, a second and a third gate electrodes and a first capacitor electrode in the non-display area; an amorphous silicon layer on the substrate; crystallizing the amorphous silicon layer to a polycrystalline silicon layer and doping specific portions of the polycrystalline silicon layer with plurality of impurity concentrations; and forming a first semiconductor layer in the display area, a second and a third semiconductor layers and a second capacitor electrode in the non-display area.
REFERENCES:
patent: 10-2003-0058771 (2003-07-01), None
patent: 10-2004-0016963 (2004-02-01), None
Hwang Kwang-Sik
Oh Kum-Mi
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Pham Thanh V
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