Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-11-07
2000-02-01
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257350, 257401, 349 43, 349 45, 349 46, 349140, H01L 2904, H01L 31036, H01L 310376
Patent
active
060205989
ABSTRACT:
To provide a semiconductor device restraining high frequency impedance and restraining deterioration of a semiconductor layer, a gate wiring 26 is extended while meandering and intersects with a substantially straight line portion of a semiconductor layer 02 by a plurality of times thereby providing a plurality of gates.
REFERENCES:
patent: 5616935 (1997-04-01), Koyama et al.
patent: 5789781 (1998-08-01), McKitterick
patent: 5789791 (1998-08-01), Bergemont
patent: 5811846 (1998-09-01), Miura et al.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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