Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-11-08
2005-11-08
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S382000
Reexamination Certificate
active
06963083
ABSTRACT:
A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.
REFERENCES:
patent: 6420758 (2002-07-01), Nakajima
patent: 6512271 (2003-01-01), Yamazaki et al.
patent: 6559906 (2003-05-01), Kawachi et al.
Philips Electronics Document entitled “Device Architectures” 2001, pp. 14-21.
LG.Philips LCD Co. , Ltd.
Morgan & Lewis & Bockius, LLP
Nguyen Cuong
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