Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-24
2007-04-24
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C257S069000
Reexamination Certificate
active
10420335
ABSTRACT:
A liquid crystal display device100comprises a thin film transistor T, a source (data) line26,a color filter23,a pixel electrode24and the like. After a gate electrode13,a gate insulating film16,and a channel region18are formed on the glass substrate10,a polyimide film20is formed to surround the peripheries of the region for forming the source/drain regions22,the color filter23,the pixel electrode24,and the source line26,respectively. A liquid material is applied to the regions surrounded with the wall made of the polyimide film20and a thermal treatment is performed to form the element of the color filter23,the pixel electrode24and the like. The polyimide film20has a property of light-shielding and then has a function as a black matrix for shielding the surroundings of the pixel region.
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Partial English translation of Japanese patent No. 2002-55363.
Partial English translation of Japanese patent No. 10-206888.
Harness & Dickey & Pierce P.L.C.
Hu Shouxiang
Seiko Epson Corporation
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