Liquid crystal display device having LDD structure type thin fil

Optical: systems and elements – Holographic system or element – Using a hologram as an optical element

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257 72, 257344, 257408, G02F 1136, H01L 2976

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active

054124930

ABSTRACT:
A thin film transistor structure for a liquid crystal display device of the active matrix type, wherein leak current is suppressed to stabilize the threshold voltage and the dispersion in the gate capacitance coupling and the channel length are minimized, is disclosed. The liquid crystal display device comprises a substrate having picture element electrodes arranged in a matrix and switching elements for driving the picture element electrodes, another substrate having opposing electrodes thereon and opposed to the former substrate, and a liquid crystal layer held between the substrates. Each switching element has a multi-gate structure wherein two thin film transistors are connected in series and gate electrodes are electrically connected to each other. Each thin film transistor has a lightly doped drain structure wherein a low density impurity region of the same conductivity type as that of a source region or a drain region is provided at least between the source or drain region and a channel region. At least one of a plurality of such low density impurity regions may have a length or a density different from that of the other low density impurity regions so as to assure sufficient on-current while suppressing the leak current.

REFERENCES:
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patent: 4945067 (1990-07-01), Huang
patent: 4948231 (1990-04-01), Aoki et al.
patent: 5198379 (1993-03-01), Adan
patent: 5250835 (1993-10-01), Izawa
patent: 5283455 (1994-02-01), Inoue et al.
Matsueda et al "Defect-Free Active-Matrix LCD with Redundant Poly-Si TFT circuit" SID 89 Digest-May 1989-pp. 238-241.

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