Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-10-11
1999-07-06
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 42, 349122, 349138, 349143, G02F 11333
Patent
active
059200820
ABSTRACT:
An aperture rate of an active matrix substrate using TFTs can be improved, a short circuit can be prevent from being caused between a pixel electrode and a signal line, or a display defectiveness due to a coupling capacitor can be prevented, and display definition can be improved. A pixel electrode patterned by a back surface exposure technique is formed on a different surface by the presence of an insulating protection film. A source electrode and the pixel electrode are connected to each other by a first contact electrode formed of a transparent conductive film to be connected to a first contact hole formed through the insulating protection film. Since a connecting portion between the source electrode and the pixel electrode through the contact hole and a connecting portion between the pixel electrode and an auxiliary capacitor electrode are transparent conductive films, an aperture rate is not reduced. The pixel electrode and the signal line are formed on the different surface by the presence of the insulating protection film. As a result, no short circuit occurs therebetween. The defectiveness of points caused by the short circuit can be prevented from being generated.
REFERENCES:
patent: 5500750 (1996-03-01), Kanabe et al.
patent: 5523865 (1996-06-01), Furata et al.
patent: 5585951 (1996-12-01), Noda et al.
Iizuka Tetsuya
Kitazawa Tomoko
Shimano Takuya
Abraham Fetsum
Kabushiki Kaisha Toshiba
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