Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-05-09
2010-10-19
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C349S043000, C349S046000
Reexamination Certificate
active
07816682
ABSTRACT:
By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode.
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Office action (Application No. 200710104131.4) dated Feb. 5, 2010 with Full English translation, 26 pages.
Fish & Richardson P.C.
Patton Paul E
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra
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