Liquid crystal display device and method of fabricating the...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S079000, C257SE33063, C438S030000

Reexamination Certificate

active

08053802

ABSTRACT:
A method of fabricating an LCD device includes forming a gate line, a gate electrode, a gate pad electrode at an end of the gate line, and a common line on a substrate; forming a gate insulating layer on the gate electrode; forming an active layer on the gate insulating layer; forming an etch stopper on the active layer; forming first and second ohmic contact layers spaced apart from each other on the active layer and an impurity-doped amorphous silicon pattern contacting the gate insulating layer therebelow, outer sides of the first and second ohmic contact layers being outside the active layer; forming a data line crossing the gate line to define a pixel region, a data pad electrode at an end of the data line, and source and drain electrodes on the first and second ohmic contact layers, respectively; forming a pixel electrode and a common electrode in the pixel region to induce an in-plane electric field; and forming a gate pad terminal electrode on the gate pad electrode. At least one of the data line, the pixel electrode and the common electrode contacts the impurity-doped amorphous silicon pattern therebelow.

REFERENCES:
patent: 2002/0158994 (2002-10-01), Hashimoto et al.
patent: 2004/0214360 (2004-10-01), Shih
patent: 2006/0092364 (2006-05-01), Chung
patent: 2006/0256249 (2006-11-01), Nagano et al.
patent: 2007/0018169 (2007-01-01), Lee et al.
patent: 2008/0158458 (2008-07-01), Yang

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