Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2010-09-13
2011-11-08
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257SE33063, C438S030000
Reexamination Certificate
active
08053802
ABSTRACT:
A method of fabricating an LCD device includes forming a gate line, a gate electrode, a gate pad electrode at an end of the gate line, and a common line on a substrate; forming a gate insulating layer on the gate electrode; forming an active layer on the gate insulating layer; forming an etch stopper on the active layer; forming first and second ohmic contact layers spaced apart from each other on the active layer and an impurity-doped amorphous silicon pattern contacting the gate insulating layer therebelow, outer sides of the first and second ohmic contact layers being outside the active layer; forming a data line crossing the gate line to define a pixel region, a data pad electrode at an end of the data line, and source and drain electrodes on the first and second ohmic contact layers, respectively; forming a pixel electrode and a common electrode in the pixel region to induce an in-plane electric field; and forming a gate pad terminal electrode on the gate pad electrode. At least one of the data line, the pixel electrode and the common electrode contacts the impurity-doped amorphous silicon pattern therebelow.
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patent: 2006/0092364 (2006-05-01), Chung
patent: 2006/0256249 (2006-11-01), Nagano et al.
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patent: 2008/0158458 (2008-07-01), Yang
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Niesz Jamie C
Picardat Kevin M
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