Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-09-29
2010-10-05
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S079000, C257S098000
Reexamination Certificate
active
07807486
ABSTRACT:
A method of fabricating an LCD device includes forming a gate line, a gate electrode, a gate pad electrode at an end of the gate line, and a common line on a substrate; forming a gate insulating layer on the gate electrode; forming an active layer on the gate insulating layer; forming an etch stopper on the active layer; forming first and second ohmic contact layers spaced apart from each other on the active layer and an impurity-doped amorphous silicon pattern contacting the gate insulating layer therebelow, outer sides of the first and second ohmic contact layers being outside the active layer; forming a data line crossing the gate line to define a pixel region, a data pad electrode at an end of the data line, and source and drain electrodes on the first and second ohmic contact layers, respectively; forming a pixel electrode and a common electrode in the pixel region to induce an in-plane electric field; and forming a gate pad terminal electrode on the gate pad electrode. At least one of the data line, the pixel electrode and the common electrode contacts the impurity-doped amorphous silicon pattern therebelow.
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LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Niesz Jamie
Smith Zandra
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