Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-06-15
2010-10-19
Fahmy, Wael M (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S128000, C438S048000, C438S151000, C438S157000, C438S161000, C438S283000, C257SE27132, C257SE27100, C257SE31097, C257SE29117, C257S057000, C257S059000, C257S072000, C257S368000, C257S079000
Reexamination Certificate
active
07816158
ABSTRACT:
The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.
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Antonelli, Terry Stout & Kraus, LLP.
Armand Marc
Fahmy Wael M
Future Vision Inc.
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