Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...
Reexamination Certificate
2003-03-28
2008-03-11
Nguyen, Dung T. (Department: 2871)
Liquid crystal cells, elements and systems
Nominal manufacturing methods or post manufacturing...
C349S042000, C349S139000, C438S754000
Reexamination Certificate
active
07342637
ABSTRACT:
A method for manufacturing the LCD device includes forming a thin film transistor array having gate and data lines crossing to each other, defining pixel regions on a substrate, and thin film transistors arranged at crossings of the gate and data lines; forming a passivation layer over the entire surface of the substrate; forming a contact hole in the passivation layer exposing drain electrodes of each thin film transistor; forming an amorphous indium tin oxide film on the passivation layer; selectively crystallizing portions of the amorphous indium tin oxide film within the pixel regions by selectively irradiating light onto the amorphous indium tin oxide thin film; and forming a pixel electrode by selectively removing uncrystallized portions of the amorphous indium tin oxide thin film.
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Hosono, Hideo, et al. “Excimer Laser Crystallization of Amorphous Indium-Tin-Oxide and Its Application to Fine Patterning.” Jpn. J. Appl. Phys. vol. 37 (1998) pp. L1119-L1121. Part 2, No. 10A, Oct. 1, 1998.
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Nguyen Dung T.
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