Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Reexamination Certificate
2005-03-28
2008-08-26
Duong, Thoi V (Department: 2871)
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
C349S187000, C349S038000, C349S140000
Reexamination Certificate
active
07417693
ABSTRACT:
In a conventional manufacturing process where the number of manufacturing processes is reduced to form a semiconductor layer of a channel etch-type insulating gate-type transistor and source-drain wires in one photographic etching processing using half-tone exposure technology, the manufacturing margin is narrow, lowering the yield if the distance between the source and the drain wire shortens.A 4-mask process proposal needless of half-tone exposure technology is constructed by streamlining the formation of scan lines and pseudo-pixel electrodes at the same time, both comprising a laminate of a transparent conductive layer and a metal layer, and the formation of the transparent conductive pixel electrodes through removing the metal layers on the pseudo-pixel electrodes at the time of the formation of the opening in the passivation insulating layer, as well as by reducing the formation process of the opening through removing a gate insulating layer also at the formation of semiconductor layers for channel-etch type insulating gate transistors.
REFERENCES:
patent: 2002/0186330 (2002-12-01), Kawasaki
A U Optronics Corp.
Bacon & Thomas PLLC
Duong Thoi V
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