Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-04-15
2008-04-15
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S066000, C257S072000, C257SE29151
Reexamination Certificate
active
11316967
ABSTRACT:
A method for fabricating a liquid crystal display includes providing a first substrate having a pixel part and a driving circuit part, forming a gate electrode in the pixel part of the first substrate, forming a first insulation film, a first amorphous silicon thin film and a second amorphous silicon thin film on the first substrate, forming a first conductive film on the first substrate, having the first insulation film, the first amorphous silicon thin film, and the second amorphous silicon thin film, selectively patterning the first conductive film, the second amorphous silicon thin film and the first amorphous silicon thin film to form an active pattern in each of the pixel part and the driving circuit part of the first substrate and source and drain electrodes, crystallizing the first amorphous silicon thin film constituting the active pattern of the driving circuit part, forming a second insulation film on the first substrate, forming a pixel electrode in the pixel part and a gate electrode in the driving circuit part, and attaching the first substrate to a second substrate.
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Cho Yong Jin
Kim Hae Yeol
Kim Sung Ki
Yoo Juhn Suk
LG.Philips LCD Co. , Ltd.
Seyfarth Shaw LLP
Trinh Michael
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