Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2005-11-29
2008-12-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C438S149000, C438S152000, C438S153000, C257SE21619, C257SE33001
Reexamination Certificate
active
07462503
ABSTRACT:
A method of fabricating a liquid crystal display device includes forming first, second, and third active patterns on a substrate having a pixel region and a driving region, wherein the first and second active patterns are in the driving region and the third active pattern is in the pixel region, the first, second, and third active patterns each having an active region, a source region, and a drain region with the source and drain regions on opposing sides of the active region, forming a gate insulator on the first, second, and third active patterns, forming first, second, and third gate electrodes on the gate insulator, wherein the first, second, and third gate electrodes correspond to the active regions of the first, second, and third active patterns, respectively, doping the source and drain regions of the first, second, and third active patterns with n− ions using the first, second, and third gate electrodes as a doping mask, doping the n− doped source and drain regions of the second active pattern with p+ ions, forming an interlayer insulating film on the first, second, and third gate electrodes and patterning the interlayer insulating film to form contact holes exposing each source and drain regions of the first, second, and third active patterns, and doping the source and drain regions of the first, second, and third active patterns with n+ ions through the contact holes.
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patent: 2006/0234429 (2006-10-01), Oh
Fourson George
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
Parker John M
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