Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-08-08
2006-08-08
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C349S044000, C349S141000
Reexamination Certificate
active
07087928
ABSTRACT:
The present invention realizes an image display of high quality by eliminating a defective display which is attributed to a stepped portion of a light shielding film which is generated in a boundary region by exposure of two or more times using an exposure mask having a size smaller than a size of a display region. Assuming a width of a scanning line GL as WG, a width of a common line CL as WC, an interval between the scanning line GL and the common line CL as WP, and a width of a light shielding film BM1as WBM, the relationship WBM<WG+WC+WPis established. Further, both end peripheries of the light shielding film BM1are positioned between an end periphery of the scanning line GL at a side opposite to the common line CL and an end periphery of the common line CL at a side opposite to the scanning line GL.
REFERENCES:
patent: 5773844 (1998-06-01), Kawamura et al.
patent: 6069678 (2000-05-01), Sakamoto et al.
patent: 6781645 (2004-08-01), Kikkawa
Nakayama Takanori
Ohkubo Masahiro
Shimizu Hiromasa
Watanabe Yoshiki
Yamada Hironobu
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi Displays Ltd.
Nelms David
Nguyen Dao H.
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