Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-09
2011-08-09
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE33004, C257SE33014
Reexamination Certificate
active
07994505
ABSTRACT:
A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.
REFERENCES:
patent: 2007/0284580 (2007-12-01), Lim et al.
patent: 2009/0050896 (2009-02-01), Kaitoh et al.
patent: 05-055570 (1993-03-01), None
Kaitoh Takuo
Miyake Hidekazu
Owaku Yoshiharu
Saitou Terunori
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
Mandala Victor
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