Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-16
2006-05-16
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S040000, C349S042000, C349S043000, C349S044000, C349S045000, C349S046000
Reexamination Certificate
active
07045816
ABSTRACT:
The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes102, gate insulating film103, source electrodes104, and drain electrodes105are formed on a glass substrate101. A patterned insulating film is formed thereon, and a part of the film in the region110on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film107in the region110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film108on the patterned insulating film106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.
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Ando Masahiko
Ishihara Shingo
Wakagi Masatoshi
Hitachi , Ltd.
Nguyen Joseph
Parker Kenneth
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