Liquid crystal display and fabrication method thereof

Details Liquid crystal display and fabrication method thereof Liquid crystal display and fabrication method thereof

2011-01-11

2011-01-11

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000, C438S151000, C438S669000, C438S703000, C257SE21411, C257SE21414, C257SE21535, C257SE21582

Reexamination Certificate

active

07867796

ABSTRACT:
A method for fabricating an LCD includes: providing a substrate with a thin film transistor (ITT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.

REFERENCES:
patent: 7489380 (2009-02-01), Lim et al.
patent: 2003/0219920 (2003-11-01), Baek et al.
patent: 2006/0290866 (2006-12-01), Choi et al.
patent: 2007/0242178 (2007-10-01), Kawasaki et al.

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