Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-07-01
2008-07-01
Hoang, Quoc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S149000, C257S061000, C257S072000, C257SE51005, C257SE29151
Reexamination Certificate
active
10973619
ABSTRACT:
A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a second metallic pattern is provided on the semiconductor pattern. The second metallic pattern is surrounded by the semiconductor pattern.
REFERENCES:
patent: 5751381 (1998-05-01), Ono et al.
patent: 5784133 (1998-07-01), Kim et al.
patent: 6121632 (2000-09-01), Taguchi et al.
patent: 6429057 (2002-08-01), Hong et al.
patent: 8-50308 (1996-02-01), None
patent: 3545717 (2004-04-01), None
U.S. Appl. No. 10/973,402, filed Oct. 27, 2004, Nakamura et al.
U.S. Appl. No. 10/973,619, filed Oct. 27, 2004, Kobayashi et al.
Kobayashi Kazuhiro
Masutani Yuichi
Nakamura Nobuhiro
Nakashima Ken
Hoang Quoc
Mitsubishi Electric Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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