Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-07-01
2008-07-01
Hoang, Quoc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S149000, C257S061000, C257S072000, C257SE51005, C257SE29151
Reexamination Certificate
active
07394097
ABSTRACT:
A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a second metallic pattern is provided on the semiconductor pattern. The second metallic pattern is surrounded by the semiconductor pattern.
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Kobayashi Kazuhiro
Masutani Yuichi
Nakamura Nobuhiro
Nakashima Ken
Hoang Quoc
Mitsubishi Electric Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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