Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-06-13
2006-06-13
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S155000
Reexamination Certificate
active
07061018
ABSTRACT:
A method of manufacturing a liquid crystal panel comprises the steps of forming a gate insulating film, a channel layer and an etching stopper layer on a transparent substrate bearing a gate electrode, exposing the substrate to light from its back surface side by using the gate electrode as a light shielding mask by photolithography, developing the resist, etching the etching stopper layer, forming a source/drain layer, and etching the source/drain layer and a remaining part of the etching stopper by chemical gas phase etching.
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Machida Masahiko
Tokuhiro Osamu
Ueda Hiroyuki
International Business Machines - Corporation
Kabushiki Kaisha Toshiba
Pillsbury Winthrop Shaw & Pittman LLP
Vu David
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