Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-04-24
2007-04-24
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21664, C423S594100, C423S598000, C423S493000, C423S594200
Reexamination Certificate
active
11260209
ABSTRACT:
It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba2+, Sr2+, Ca2+, Pb2+, La3+, K+and Na+, and B is at least one member selected from the group consisting of Ti4+, Zr4+, Nb5+, Ta5+and Fe3+) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.
REFERENCES:
patent: 2852400 (1958-09-01), Remeika
patent: 3994823 (1976-11-01), Ainger et al.
patent: 4077823 (1978-03-01), Wright
patent: 4874598 (1989-10-01), Oda et al.
patent: 5453262 (1995-09-01), Dawson et al.
patent: 5650362 (1997-07-01), Nashimoto
patent: 5656382 (1997-08-01), Nashimoto
patent: 5849071 (1998-12-01), Derbenwick et al.
patent: 5925183 (1999-07-01), Kato et al.
patent: 6001416 (1999-12-01), Moriyama et al.
patent: 6027826 (2000-02-01), deRochemont et al.
patent: 6210752 (2001-04-01), Boyle
patent: 6343855 (2002-02-01), Sakamaki et al.
patent: 6358433 (2002-03-01), Tan et al.
patent: 6478412 (2002-11-01), Hanabata
patent: 6514476 (2003-02-01), Messing et al.
patent: 6589457 (2003-07-01), Li et al.
patent: 6664115 (2003-12-01), Azuma et al.
patent: 2003/0161959 (2003-08-01), Kodas et al.
patent: 2004/0095658 (2004-05-01), Buretea et al.
patent: 2004/0136891 (2004-07-01), Kijima et al.
patent: 2005/0036939 (2005-02-01), Wong et al.
patent: 2005/0186752 (2005-08-01), Noguchi
patent: 2006/0062723 (2006-03-01), Noguchi
patent: 6-119811 (1994-04-01), None
patent: 7-78509 (1995-03-01), None
patent: 7-82022 (1995-03-01), None
patent: 9-86906 (1997-03-01), None
patent: 11-185529 (1999-07-01), None
patent: 2001-240469 (2001-09-01), None
Kajima et al, Ferroelectrics, (2002) vol. 271, pp. 289-295.
Suzuki et al, Jpn. J. Appl. Phys., (1996) vol. 35, pp. 4896-4899.
Hirano et al, J. Am. Ceram. Soc., (1992) vol. 75, pp. 2785-2789.
Fujimori et al, Jpn. J. Appl. Phys. (1999) vol. 38, pp. 5346-5349.
Zhu et al, Jpn. J. Appl. Phys. (2002) vol. 41, pp. 6969-6975.
U.S. Appl. No. 11/340,548, filed Jan. 27, 2006, Sunahara et al.
Beppu Yoshihisa
Sunahara Kazuo
Tomonaga Hiroyuki
Anya Igwe U.
Asahi Glass Company Limited
Baumeister B. William
LandOfFree
Liquid composition for forming ferroelectric thin film and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Liquid composition for forming ferroelectric thin film and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid composition for forming ferroelectric thin film and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3762219