Liquid-based gravity-driven etching-stop technique for...

Details Liquid-based gravity-driven etching-stop technique for... Liquid-based gravity-driven etching-stop technique for...

2005-10-05

2008-10-14

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

C216S002000, C216S084000, C438S745000, C134S001200, C134S002000, C134S003000

Reexamination Certificate

active

07435355

ABSTRACT:
A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

REFERENCES:
patent: 4469554 (1984-09-01), Turner
patent: 6203660 (2001-03-01), Unger et al.
patent: 6369931 (2002-04-01), Funk et al.
patent: 6939408 (2005-09-01), Abramovich et al.
patent: 2005/0150280 (2005-07-01), Tang et al.
patent: WO-2004068501 (2004-08-01), None

Affiliated with

Also associated with

Rating

Liquid-based gravity-driven etching-stop technique for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid-based gravity-driven etching-stop technique for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid-based gravity-driven etching-stop technique for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4011313