Liquid-assisted cryogenic cleaning

Details Liquid-assisted cryogenic cleaning Liquid-assisted cryogenic cleaning

2005-02-08

2005-02-08

Barr, Michael (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S002000, C134S034000

Reexamination Certificate

active

06852173

ABSTRACT:
The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.

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